For more than 30 years, we've developed multiple generations of DRAM technology, including leading-edge DDR3, in countless densities and configurations. So no matter what you’re designing, Micron has a memory solution that’s right for your application.

Dynamic RAM, or DRAM is a form of random access memory, RAM. It is widely used in PCs and other processor based systems as the basic form of working memory within the system.

Although a variety of other different types of semiconductor memory that are available, dynamic RAM - DRAM is widely used in all forms of microprocessor and computer equipment.

Over the years, DRAM has been one of the most widely used memory technologies and is also in widespread use today.




Built on advanced process technologies, our NOR Flash memory enables fast read performance and architectural versatility for today’s diverse application needs. Whether you’re seeking high performance, security options, design simplicity and continuity, or a small form factor, our extensive NOR product offering can deliver the steady supply of reliable NOR solutions that your wireless, embedded, or automotive application requires.
NOR flash memory is commonly used in mobile phones.



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NAND are flash memory which may be written and read in blocks. The NAND type is primarily used in memory cards, USB flash drives, solid-state drives, and similar products, for general storage and transfer of data. NAND flash also uses floating-gate transistors, but they are connected in a way that resembles a NAND logic gate: several transistors are connected in series, and only if all word lines are pulled highis the bit line pulled low. These groups are then connected via some additional transistors to a NOR-style bit line array in the same way that single transistors are linked in NOR flash.

Compared to NOR type flash memory, replacing single transistors with serial-linked groups adds an extra level of addressing. Whereas NOR flash might address memory by page then word, NAND flash might address it by page, word and bit. Bit-level addressing suits bit-serial applications (such as hard disk emulation), which access only 1 bit at a time. Execute-In-Place applications, on the other hand, require every bit in a word to be accessed simultaneously. This requires word-level addressing. In any case, both bit and word addressing modes are possible with either NOR or NAND flash.

To read, first the desired group is selected (in the same way that a single transistor is selected from a NOR array). Next, most of the word lines are pulled up above the VT of a programmed bit, while one of them is pulled up to just over the VT of an erased bit. The series group will conduct (and pull the bit line low) if the selected bit has not been programmed.

Despite the additional transistors, the reduction in ground wires and bit lines allows a denser layout and greater storage capacity per chip. (The ground wires and bit lines are actually much wider than the lines in the diagrams.) In addition, NAND flash is typically permitted to contain a certain number of faults (NOR flash, as is used for a BIOS ROM, is expected to be fault-free). Manufacturers try to maximize the amount of usable storage by shrinking the size of the transistor below the size where they can be made reliably, to the size where further reductions would increase the number of faults faster than it would increase the total storage available.




From low-density, cost-effective embedded storage, to standard HDD replacement drives, and enterprise class storage solutions, our RealSSD products provide capacity, power, and performance advantages that can take storage designs further than ever before. And because we design and manufacture the NAND from fabrication to the finished package device, our stringent quality requirements and significant investments in solid state drive test equipment mean that reliability is literally built into every RealSSD.